TMU4N60AZ

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD4N60AZ(G)/TMU4N60AZ(G) BVDSS 600V N-channel MOSFET ID RDS(on) 4.0A < 2.5W I-PAK Device TMD4N60AZ / TMU4N60AZ TMD4N60AZG / TMU4N60AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMD4N60AZ / TMU4N60AZ TMD4N60AZG / TMU4N60AZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMD4N60AZ(G)/TMU4N60AZ(G) 600 ±30 4 2.34 16 192 4 8.62 86.2 0.68 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMD4N60AZ(G)/TMU4N60AZ(G) 1.45 110 October 2012 : Rev0 www.trinnotech.com Unit ℃/W ℃/W 1/6 TMD4N60AZ(G)/TMU4N60AZ(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test c...