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TMU8N60AZG

N-channel MOSFET

Description

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD8N60AZ(G)/TMU8N60AZ(G) BVDSS 600V N-channel MOSFET ID RDS(on) 7.5A <1.2W I-PAK Device TMD8N60AZ / TMU8N60AZ TMD8N60AZG / TMU8N60AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute ...

TRinno

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