DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA2730TP
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION The µPA2730TP which has ...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µPA2730TP
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION The µPA2730TP which has a heat spreader is P-Channel
MOS Field Effect
Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.
FEATURES Low on-state resistance
RDS(on)1 = 7.0 mΩ MAX. (VGS = –10 V, ID = –7.5 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = –4.5 V, ID = –7.5 A) RDS(on)3 = 12.0 mΩ MAX. (VGS = –4.0 V, ID = –7.5 A) Low Ciss: Ciss = 4670 pF TYP. Small and surface mount package (Power HSOP8)
ORDERING INFORMATION
PART NUMBER µPA2730TP
PACKAGE Power HSOP8
1.49 ±0.21 1.44 TYP.
0.05 ±0.05
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3
; Source
4 ; Gate
5, 6, 7, 8, 9 ; Drain
14
5.2
+0.17 –0.2
+0.10 –0.05
0.8 ±0.2 S
6.0 ±0.3 4.4 ±0.15
0.15
1.27 TYP.
0.40
+0.10 –0.05
14
0.12 M
1.1 ±0.2
2.9 MAX.
2.0 ±0.2 9
4.1 MAX.
85
0.10 S
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
−30
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C) Drain Current (DC) Note1 Drain Current (pulse) Note2
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Note1
Channel Temperature
VGSS ID(DC)1 ID(DC)2 ID(pulse)
PT1 PT2 Tch
m20 m42 m20 m120 40
3
150
V A A A W W °C
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Storage Temperature Single Avalanche Current Note3 Single Avalanche Energy Note3
Tstg −55 to + 150 °C
IAS...
