K372

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications 2SK372 Unit: mm · High breakdown voltage: VGDS = −40 V · High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) · Low RDS (ON): RDS (ON) = 20 Ω (typ.) (IDSS = 15 mA) · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -40 10 200 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1C Weight: 0.13 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Drain-source ON resistance IGSS V (BR) GDS VGS = -30 V, VDS = 0 VDS = 0, IG = -100 mA ¾ ¾ -1.0 nA -40 ¾ ¾ V IDSS (Note 1) VDS = 10 V, VGS = 0 5.0 ¾ 30 mA VGS (OFF) VDS = 10 V, ID = 0.1 mA -0.3 ¾ -1.2 V ïYfsï VDS = 10 V, VGS = 0, f = 1 kHz (Note 2) 25 60 ¾ mS Ciss VDS = 10 V, VGS = 0, f = 1 MHz ¾ 75 ¾ pF Crss VDG = 10 V, ID = 0, f = 1 MHz ¾ 15 ¾ pF RDS (ON) VDS = 10 mV, VGS = 0 (Note 2) ¾ 20 ¾ W Note 1: IDSS classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, Y: 14.0~30.0 mA Note 2: Concition of the typical value IDSS = 15 mA 1 2003-03-26 2SK372 2 2003-03-26 2SK372 3...