Document
2N4338/4339/4340/4341
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
2N4338 2N4339 2N4340 2N4341
VGS(off) (V)
–0.3 to –1 –0.6 to –1.8
–1 to –3 –2 to –6
V(BR)GSS Min (V) gfs Min (mS)
–50 0.6 –50 0.8 –50 1.3 –50 2
IDSS Max (mA)
0.6 1.5 3.6 9
FEATURES
D Low Cutoff Voltage: 2N4338 <1 V D High Input Impedance D Very Low Noise D High Gain: AV = 80 @ 20 mA
BENEFITS
D Full Performance from Low-Voltage Power Supply: Down to 1 V
D Low Signal Loss/System Error D High System Sensitivity D High-Quality Low-Level Signal
Amplification
APPLICATIONS
D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Infrared Detector Amplifiers D Ultrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy.
The TO-206AA (TO-18) package is hermetically sealed and suitable for military processing (see Military Information). For similar products in TO-226AA (TO-92) and TO-236 (SOT-23) packages, see the J/SST201 series data sheet.
TO-206AA (TO-18)
S 1
2 D
3
Top View
G and Case
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 175_C
For applications information see AN102 and AN106.
Document Number: 70240 S-04028—Rev. E, 04-Jun-01
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Notes a. Derate 2 mW/_C above 25_C
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2N4338/4339/4340/4341
Vishay Siliconix
SPECIFICATIONS FOR 2N4338 AND 2N4339 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4338
2N4339
Parameter
Symbol
Test Conditions
Typa Min Max Min Max
Unit
Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb
Gate Reverse Current
Gate Operating Currentb Drain Cutoff Current Gate-Source Forward Voltagec
Dynamic
V(BR)GSS VGS(off)
IDSS
IGSS
IG ID(off) VGS(F)
IG = –1 mA , VDS = 0 V VDS = 15 V, ID = 0.1 mA VDS = 15 V, VGS = 0 V VGS = –30 V, VDS = 0 V
TA = 150_C VDG = 15 V, ID = 0.1 mA VDS = 15 V, VGS = –5 V
IG = 1 mA , VDS = 0 V
–57 –50 –0.3
–50 –1 –0.6 –1.8
V
0.2 0.6 0.5 1.5 mA
–2
–100
–100 pA
–4
–100
–100 nA
–2 pA
2 50 50
0.7 V
Common-Source Forward Transconductance
Common-Source Output Conductance
Drain-Source On-Resistance
Common-Source Input Capacitance
Common-Source Reverse Transfer Capacitance
Equivalent Input Noise Voltagec
Noise Figure
gfs gos rds(on) Ciss Crss en N.