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2N4341 Dataheets PDF



Part Number 2N4341
Manufacturers Vishay
Logo Vishay
Description N-Channel JFETs
Datasheet 2N4341 Datasheet2N4341 Datasheet (PDF)

2N4338/4339/4340/4341 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number 2N4338 2N4339 2N4340 2N4341 VGS(off) (V) –0.3 to –1 –0.6 to –1.8 –1 to –3 –2 to –6 V(BR)GSS Min (V) gfs Min (mS) –50 0.6 –50 0.8 –50 1.3 –50 2 IDSS Max (mA) 0.6 1.5 3.6 9 FEATURES D Low Cutoff Voltage: 2N4338 <1 V D High Input Impedance D Very Low Noise D High Gain: AV = 80 @ 20 mA BENEFITS D Full Performance from Low-Voltage Power Supply: Down to 1 V D Low Signal Loss/System Error D High System Sensitivity.

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2N4338/4339/4340/4341 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number 2N4338 2N4339 2N4340 2N4341 VGS(off) (V) –0.3 to –1 –0.6 to –1.8 –1 to –3 –2 to –6 V(BR)GSS Min (V) gfs Min (mS) –50 0.6 –50 0.8 –50 1.3 –50 2 IDSS Max (mA) 0.6 1.5 3.6 9 FEATURES D Low Cutoff Voltage: 2N4338 <1 V D High Input Impedance D Very Low Noise D High Gain: AV = 80 @ 20 mA BENEFITS D Full Performance from Low-Voltage Power Supply: Down to 1 V D Low Signal Loss/System Error D High System Sensitivity D High-Quality Low-Level Signal Amplification APPLICATIONS D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery-Powered Amplifiers D Infrared Detector Amplifiers D Ultrahigh Input Impedance Pre-Amplifiers DESCRIPTION The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy. The TO-206AA (TO-18) package is hermetically sealed and suitable for military processing (see Military Information). For similar products in TO-226AA (TO-92) and TO-236 (SOT-23) packages, see the J/SST201 series data sheet. TO-206AA (TO-18) S 1 2 D 3 Top View G and Case ABSOLUTE MAXIMUM RATINGS Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 175_C For applications information see AN102 and AN106. Document Number: 70240 S-04028—Rev. E, 04-Jun-01 Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Notes a. Derate 2 mW/_C above 25_C www.vishay.com 7-1 2N4338/4339/4340/4341 Vishay Siliconix SPECIFICATIONS FOR 2N4338 AND 2N4339 (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N4338 2N4339 Parameter Symbol Test Conditions Typa Min Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentb Drain Cutoff Current Gate-Source Forward Voltagec Dynamic V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VGS(F) IG = –1 mA , VDS = 0 V VDS = 15 V, ID = 0.1 mA VDS = 15 V, VGS = 0 V VGS = –30 V, VDS = 0 V TA = 150_C VDG = 15 V, ID = 0.1 mA VDS = 15 V, VGS = –5 V IG = 1 mA , VDS = 0 V –57 –50 –0.3 –50 –1 –0.6 –1.8 V 0.2 0.6 0.5 1.5 mA –2 –100 –100 pA –4 –100 –100 nA –2 pA 2 50 50 0.7 V Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec Noise Figure gfs gos rds(on) Ciss Crss en N.


2N4340 2N4341 2N4338


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