DATA SHEET
SILICON POWER TRANSISTOR
2SD1692
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FEATURES
• High DC current gain due to Darlington connection • Large current capacity and low VCE(sat) • Large power dissipation TO-126 type power transistor • Complementary transistor: 2SB1149
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissip.