IS65WV12816EALL

IS62/65WV12816EALL IS62/65WV12816EBLL 128Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM PRELIMINARY INFORMATION DECEMBER 2014 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV12816EALL) – 2.2V-3.6V VDD (IS62/65WV12816EBLL)  Three state outputs  Industrial and Automotive temperature support  2CS Option Available  Lead-free available BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV12816EALL/EBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. When is HIGH (deselected) or when CS2 is LOW (deselected) or when is LOW, CS2 is HIGH and both and are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable controls both writing and reading of the memory. A data byte allows Upper Byte and Lower Byte ( access. The IS62/65WV12816EALL/EBLL are packaged in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II). A0 – A16 DECODER 128K x 16 MEMORY ARRAY VDD GND I/O0 – I/O7 Lower Byte I/O8 – I/O15 Up...