IS62WV10248EBLL

IS62WV10248EALL/BLL IS65WV10248EALL/BLL 1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM NOVEMBER 2014 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – 36 mW (typical) operating – 12 µW (typical) CMOS standby  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (62/65WV10248EALL) – 2.2V-3.6V VDD (62/65WV10248EBLL)  Data control for upper and lower bytes  Automotive temperature (-40oC to +125oC)  Lead-free available BLOCK DIAGRAM DESCRIPTION The ISSI IS62WV10248EALL/ IS62WV10248EBLL are high-speed, 8M bit static RAMs organized as 1M words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When is HIGH (deselected) or when CS2 is low (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable ( ) controls both writing and reading of the memory. The IS62WV10248EALL and IS62WV10248EBLL are packaged in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II). Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the ...