IS65WV102416EALL

IS62/65WV102416EALL IS62/65WV102416EBLL 1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEBRUARY 2016 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 µW (1.8V), 90 µW (3.0V)  TTL compatible interface levels  Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vdd (62/65WV102416EBLL)  Data control for upper and lower bytes  Industrial and Automotive temperature support BLOCK DIAGRAM DESCRIPTION The IS62WV102416EALL/BLL and IS65WV102416EALL/BLL are Low Power, 16M bit static RAMs organized as 1024K words by 16bits. It is fabricated using 's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. When is HIGH (deselected) or when CS2 is low (deselected) or when is low , CS2 is high and both and are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable controls both writing and reading of the memory. A data byte allows Upper Byte and Lower Byte ( access. The IS62WV102416EALL/BLL and IS65WV102416EALL/BLL are packaged in the JEDEC standard 48-pin BGA (6mm x 8mm). Copyright © 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves t...