1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV10248EDBLL IS64WV10248EDBLL
1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
FEBRUARY 2013
FEATURES • ...
Description
IS61WV10248EDBLL IS64WV10248EDBLL
1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
FEBRUARY 2013
FEATURES High-speed access times: 8, 10, 20 ns High-performance, low-power CMOS process Multiple center power and ground pins for
greater noise immunity Easy memory expansion with CE and OE options CE power-down Fully static operation: no clock or refresh
required TTL compatible inputs and outputs Packages available:
– 48-ball miniBGA (6mm x 8mm) – 44-pin TSOP (Type II) Industrial and Automotive Temperature Support Lead-free available
DESCRIPTION
The ISSI IS61/64WV10248EDBLL are very high-speed,
low power, 1M-word by 8-bit CMOS static RAM. The
IS61/64WV10248EDBLL are fabricated using ISSI's
high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
The IS61/64WV10248EDBLL operate from a single power supply and all inputs are TTL-compatible.
The IS61/64WV10248EDBLL are available in 48 ball mini BGA (6mm x 8mm) and 44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A19
Decoder
Memory Array (1024Kx8)
ECC Array (1024Kx4)
IO0-7
8
I/O Data Circuit
8
12 ECC
84 Column I/O
/CE /OE /WE
Control Circuit
Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserv...
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