IS61WV10248EDBLL

IS61WV10248EDBLL IS64WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEBRUARY 2013 FEATURES High-speed access times: 8, 10, 20 ns High-performance, low-power CMOS process Multiple center power and ground pins for greater noise immunity Easy memory expansion with CE and OE options CE power-down Fully static operation: no clock or refresh required TTL compatible inputs and outputs Packages available: – 48-ball miniBGA (6mm x 8mm) – 44-pin TSOP (Type II) Industrial and Automotive Temperature Support Lead-free available DESCRIPTION The ISSI IS61/64WV10248EDBLL are very high-speed, low power, 1M-word by 8-bit CMOS static RAM. The IS61/64WV10248EDBLL are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. The IS61/64WV10248EDBLL operate from a single power supply and all inputs are TTL-compatible. The IS61/64WV10248EDBLL are available in 48 ball mini BGA (6mm x 8mm) and 44-pin TSOP (Type II) packages. FUNCTIONAL BLOCK DIAGRAM A0-A19 Decoder Memory Array (1024Kx8) ECC Array (1024Kx4) IO0-7 8 I/O Data Circuit 8 12 ECC 84 Column I/O /CE /OE /WE Control Circuit Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserv...