IS66WVD4M16ALL

IS66WVD4M16ALL 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst mode for increased read and write bandwidth. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core. Features  Single device supports asynchronous and burst operation  Mixed Mode supports asynchronous write and synchronous read operation  Dual voltage rails for optional performance  VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  Multiplexed address and data bus  ADQ0~ADQ15  Asynchronous mode read access : 70ns  Burst mode for Read and Write operation  4, 8, 16 or Continuous  Low Power Consumption  Asynchronous Operation < 25 mA  Burst operation < 35 mA (@104Mhz)  Standby < 150 uA(max.)  Deep power-down (DPD) < 3uA (Typ)  Low Power Feature  Reduced Array Refresh  Temperature Controlled Refresh  Operation Frequency up to 104MHz  Operating temperature Range Industrial -40°C~85...