32Mb Async and Burst CellularRAM
IS66WVD2M16ALL
32Mb Async and Burst CellularRAM 2.0
Overview The IS66WVD2M16ALL is an integrated memory device containin...
Description
IS66WVD2M16ALL
32Mb Async and Burst CellularRAM 2.0
Overview The IS66WVD2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst mode for increased read and write bandwidth. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Features
Single device supports asynchronous and burst operation
Mixed Mode supports asynchronous write and synchronous read operation
Dual voltage rails for optional performance VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
Multiplexed address and data bus ADQ0~ADQ15
Asynchronous mode read access : 70ns Burst mode for Read and Write operation
4, 8, 16 or Continuous
Low Power Consumption Asynchronous Operation < 25 mA Burst operation < 35 mA (@104Mhz) Standby < 150 uA(max.) Deep power-down (DPD) < 3uA (Typ)
Low Power Feature Reduced Array Refresh Temperature Controlled Refresh
Operation Frequency up to 104MHz Operating temperature Range
Industrial -40°C~85...
Similar Datasheet