IS67WVC4M16ALL

IS66WVC4M16ALL IS67WVC4M16ALL 64Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core. Features  Single device supports asynchronous , page, and burst operation  Mixed Mode supports asynchronous write and synchronous read operation  Dual voltage rails for optional performance  VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 20ns  Burst mode for Read and Write operation  4, 8, 16,32 or Continuous  Low Power Consumption  Asynchronous Operation < 25 mA  Intrapage Read < 18mA  Burst operation < 35 mA (@104Mhz)  Standby < 180 uA (max.)  Deep power-down (DPD) < 3uA (Typ)  Low Power Feature  Reduced Array Refresh  Temperature Controlled Refresh  Deep power-down (DPD) mode  Operation Frequency up to 104Mhz  Operating temperature Range Industrial: -40°C~85°C Automotive A1: -40°C~85°C  Package: 54-ball VFBGA Copyright © ...