IS66WV51216ALL

IS66WV51216ALL IS66WV51216BLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JANUARY 2010 FEATURES High-speed access time: 55ns CMOS low power operation – mW (typical) operating – µW (typical) CMOS standby Single power supply – 1.7V--1.95V Vdd (66WV51216ALL) (70ns) – 2.5V--3.6V Vdd (66WV51216BLL) (55ns) Three state outputs Data control for upper and lower bytes Industrial temperature available Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS66WV51216ALL/BLL is a high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is low (deselected) or when CS1 is low, CS2 is high and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS66WV51216ALL/BLL is packaged in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II). The device is aslo available for die sales. A0-A18 DECODER 512K x 16 MEMORY ARRAY VDD GND I/O0-I/O7 Lower Byte I/O8-I/O1...