IS62WV2568DBLL

  IS62/65WV2568DALL  IS62/65WV2568DBLL 256K x 8 LOW VOLTAGE, JUNE 2013 ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 35ns, 45ns, 55ns CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby TTL compatible interface levels Single power supply – 1.8V ± 10% Vcc (IS62/65WV2568DALL) – 2.5V–3.6V Vcc (IS62/65WV2568DBLL) Fully static operation: no clock or refresh required Three state outputs Industrial temperature available Lead-free available DESCRIPTION The ISSI IS62/65WV2568DALL and IS62/65WV2568DBLL are high-speed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is low (deselected) , the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62/65WV2568DALL and IS62/65WV2568DBLL are packaged in the JEDEC standard 32-pin TSOP (TYPE I), sTSOP (TYPE I), and 36-pin mini BGA. FUNCTIONAL BLOCK DIAGRAM A0-A17 VCC GND I/O0-I/O7 DECODER I/O DATA CIRCUIT 256K x 8 MEMORY ARRAY COLUMN I/O CS2 CS1 OE WE CONTROL CIRCUIT ...