1.8V Core Async/Page PSRAM
IS66WVE2M16DALL
1.8V Core Async/Page PSRAM
Overview The IS66WVE2M16DALL is an integrated memory device containing 32Mbit...
Description
IS66WVE2M16DALL
1.8V Core Async/Page PSRAM
Overview The IS66WVE2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Features
Asynchronous and page mode interface Dual voltage rails for optional performance
VDD 1.8V, VDDQ 1.8V Page mode read access
Interpage Read access : 70ns Intrapage Read access : 20ns Low Power Consumption Asynchronous Operation < 30 mA Intrapage Read < 18mA Standby < 150 uA (max.) Deep power-down (DPD) < 3uA (Typ)
Low Power Feature Temperature Controlled Refresh Partial Array Refresh Deep power-down (DPD) mode
Operating temperature Range Industrial -40°C~85°C
Package: 48-ball TFBGA
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information an...
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