FBS10-06SC

Advanced Technical Information FBS 10-06SC Silicon Carbide Schottky Rectifier Bridge in ISOPLUS i4-PAC™ VRRM = 600 V IdAVM = 6.6 A Cjunction = 9 pF 1 4 5 1 5 2 Rectifier Bridge Symbol Conditions VRRM IFAV ID(AV)M IFSM Ptot TC = 90°C; sine 180° (per diode) TC = 90°C TC = 25°C; t = 10 ms; sine 50 Hz TC = 25°C (per diode) Maximum Ratings 600 V 3A 6.6 A 12 A 19 W Symbol Conditions VF IR CJ RthJC RthJS IF = 4 A VR = VRRM VR = 400 V Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C TVJ = 125°C (per diode) 1.7 2.0 1.9 V V 0.2 mA 0.04 mA 9 pF 8 K/W 11.5 K/W Features Silicon Carbide Schottky Diodes - no reverse recovery at turn off - only charge of junction capacity - soft turn off waveform - no forward recovery at turn on - switching behaviour independent of temperature - low leakage current ISOPLUS i4-PAC™ package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - high reliability - industry standard outline Applications output rectifiers of high end switch mode power supplies other high frequency rectifiers IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20080602a -2 Advanced Technical Information Component Symbol Conditions TVJ Tstg VISOL FC operating IISOL < 1 mA; 50/60 Hz ...