Central
CMPT930
NPN SILICON TRANSISTOR DESCRIPTION
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CMPT930 type is a...
Central
CMPT930
NPN SILICON
TRANSISTOR DESCRIPTION
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CMPT930 type is an
NPN silicon
transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier applications. Marking Code is C1X. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA
45 45 5.0 30 350 -65 to +150 357
UNITS V V V mA mW
oC oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICEO ICES IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) hFE hFE hFE fT Cob NF TEST CONDITIONS VCB=45V VCE=5.0V VCE=45V VEB=5.0V IC=10µA IC=10mA IE=10µA IC=10mA, IB=0.5mA IC=10mA, IB=0.5mA VCE=5.0V, IC=10µA VCE=5.0V, IC=500µA VCE=5.0V, IC=10mA VCE=5.0V, IC=500mA, f=30MHz VCB=5.0V, IE=0, f=1.0MHz VCE=5.0V, IC=10mA, RS=10kΩ, f=10Hz to 15.7kHz MIN MAX 10 10 10 10 UNITS nA nA nA nA V V V V V
45 45 5.0 0.6 100 150 30 8.0 3.0 1.0 1.0 300 600
MHz pF dB
156
All dimensions in inches (mm).
LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR
R2
157
...