CMPT5401
PNP SILICON TRANSISTOR
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CMPT5401 type ...
CMPT5401
PNP SILICON
TRANSISTOR
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CMPT5401 type is an
PNP silicon
transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. Marking Code is C2L. SOT-23 CASE
MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA
160 150 5.0 500 350 -65 to +150 357
UNITS V V V mA mW
oC oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob TEST CONDITIONS VCB=100V VCB=100V, TA=150oC IC=100µA IC=1.0mA IE=10µA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz MIN MAX 50 50 UNITS nA µA V V V V V V V
160 150 5.0 0.2 0.5 1.0 1.0 50 60 50 100 240 300 6.0
MHz pF
184
SYMBOL hfe NF
TEST CONDITIONS VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200µA, RS=10Ω f=10Hz to 15.7kHz
MIN 40
MAX 200 8.0
UNITS
dB
All dimensions in inches (mm).
LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR
R2
185
...