YG971S8R

YG971S8R Low-Loss Fast Recovery Diode http://www.fujisemi.com FUJI Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25˚C unless otherwise specified.) Item Symbols Repetitive peak reverse voltage VRRM Isolating voltage Viso Average forward current IFAV Non-repetitive forward surge current Operating junction temperature Storage temperature IFSM Tj Tstg Conditions - Terminals-to-case, AC.1min 50Hz Square wave duty =1/2 Tc = 93˚C Sine wave, 10ms 1shot - - Ratings 800 1500 5 60 150 -40 to +150 Units V V A A ˚C ˚C Electrical characteristics Item Forward voltage Reverse current Reverse recovery time Thermal resistance (at Ta=25˚C unless otherwise specified.) Symbols Conditions VF IF =5 A IR VR =VRRM trr IF =0.1A, IR =0.2A, Irec =0.05A Rth(j-c) Junction to case Maximum 2.2 10 50 4.5 Units V µA µS ˚C/W Mechanical characteristics Item Mounting torque Approximate mass Conditions Recommended torque - Maximum 0.3 to 0.5 1.7 Units Nm g 1 YG971S8R Outline Drawings [mm] 8 FUJI Diode http://www.fujisemi.com 8 2 IF Forward Current (A) IR Reverse Current (µA) YG971S8R Forward Characteristic (typ.) 10 Tj=150°C Tj=125°C Tj=100°C Tj=25°C 1 0.1 0.5 1.0 1.5 2.0 2.5 3.0 VF Forward Voltage (V) FUJI Diode http://www.fujisemi.com Reverse Characteristic (typ.) Tj=150°C 101 Tj=125°C 100 Tj=100°C 10-1 10-2 Tj=25°C 10-3 0 100 200 300 400 500 600 700 800 900 VR Reverse Voltage (V) WF Forward Power Dissipation (W) PR Reverse Power Dissipation (W) Forw...