Document
High Voltage Standard Rectifier
Single Diode
Part number
DNA30EM2200PZ
1 4
3
DNA30EM2200PZ
VRRM I FAV VF
= = =
2200 V 30 A
1.24 V
Backside: anode
Features / Advantages:
● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour
Applications:
● Diode for main rectification ● For single and three phase
bridge configurations
Package: TO-263 (D2Pak-HV)
● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● High creepage distance
between terminals
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130325a
Rectifier
Symbol VRSM VRRM IR
VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
VR = 2200 V
VR = 2200 V
forward voltage drop
IF = 30 A
IF = 60 A
IF = 30 A
IF = 60 A
average forward current
TC = 140°C
rectangular
d = 0.5
VF0 rF R thJC R thCH Ptot I FSM
threshold voltage slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation max. forward surge current
t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 700 V; f = 1 MHz
DNA30EM2200PZ
TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C
TVJ = 150 °C
TVJ = 175°C
Ratings
min. typ. max. 2300 2200 40 1.5 1.26 1.53 1.24 1.63 30
Unit V V
µA mA
V V V V A
TVJ = 175°C
TC = 25°C TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 25°C
0.25 7
0.83 V 13.4 mΩ
0.7 K/W K/W
210 W 370 A 400 A 315 A 340 A 685 A²s 665 A²s 495 A²s 480 A²s
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130325a
Package TO-263 (D2Pak-HV)
Symbol Definition
I RMS TVJ T op Tstg Weight
RMS current virtual junction temperature operation temperature storage temperature
Conditions
per terminal
FC d Spp/App d Spb/Apb
mounting force with clip creepage distance on surface | striking distance through air
DNA30EM2200PZ
terminal to terminal terminal to backside
Ratings
min. typ. max. 35
-55 175 -55 150 -55 150
1.5
20 60 4.2 4.7
Unit A °C °C °C g
N mm mm
Product Marking
Part No.
Logo Assembly Line
Date Code Assembly Code
XXXXXXXXX
IXYS Zyyww
000000
Part number
D = Diode N = High Voltage Standard Rectifier A = (>= 2000V) 30 = Current Rating [A] EM = Single Diode 2200 = Reverse Voltage [V] PZ = TO-263AB (D2Pak) (2HV)
Ordering Standard
Part Number DNA30EM2200PZ
Marking on Product DNA30EM2200PZ
Delivery Mode Tape & Reel
Quantity Code No. 800 514467
Similar Part DNA30E2200PZ DNA30E2200PA DNA30E2200FE DNA30E2200IY
Package TO-263AB (D2Pak) (2HV) TO-220AC i4-Pac (2HV) TO-262 (I2Pak) (2HV)
Voltage class 2200 2200 2200 2200
Equivalent Circuits for Simulation
I V0
R0
Rectifier
V 0 max R0 max
threshold voltage slope resistance *
0.83 10.2
* on die level
T VJ = 175 °C
V mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130325a
DNA30EM2200PZ
Outlines TO-263 (D2Pak-HV)
WA c2
E
D L1
13
e1 2x e
A1
H
A2
L
10.92 (0.430)
c 2x b2
mm (Inches)
Supplier Option
4
2x b E1
D2 D1
Dim. Millimeter min max
Inches min max
A 4.06 4.83 0.160 0.190
A1 typ. 0.10
typ. 0.004
A2 2.41
0.095
b 0.51 0.99 0.020 0.039
b2 1.14 1.40 0.045 0.055
c 0.40 0.74 0.016 0.029
c2 1.14 1.40 0.045 0.055
D 8.38 9.40 0.330 0.370
D1 8.00 8.89 0.315 0.350
D2 2.3
0.091
E 9.65 10.41 0.380 0.410
E1 6.22 8.50 0.245 0.335
e 2,54 BSC
0,100 BSC
e1 4.28
0.169
H 14.61 15.88 0.575 0.625
L 1.78 2.79 0.070 0.110
L1 1.02 1.68 0.040 0.066
W
typ. 0.02
0.040
typ. 0.0008
0.002
All dimensions conform with
and/or within JEDEC standard.
9.02 (0.355)
3.81 (0.150)
1.78 (0.07)
2.54 (0.100)
3.05 (0.120)
Recommended min. foot print
1 4
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130325a
DNA30EM2200PZ
Rectifier
60
300
103 VR = 0 V
40 IF
250 IFSM
TVJ = 45°C
[A] 20
[A] 200
TVJ = 150°C
TVJ = 150°C TVJ = 125°C TVJ = 25°C
0 0.5 1.0 1.5 2.0
VF [V] Fig. 1 Forward current versus
voltage drop per diode
50 Hz, 80% VRRM
150 0.001
0.01
0.1
1
t [s] Fig. 2 Surge overload current
I2t [A2s]
TVJ = 45°C TVJ = 150°C
102 1
2 3 4 5 6 7 8 910
t [ms] Fig. 3 I2t versus time per diode
50
40
30 Ptot
20 [W]
dc = 1 0.5 0.4 0.33 0.17 0.08
10
RthKA = 0.6 K/W 0.8 K/W 1.0.