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DNA30EM2200PZ Dataheets PDF



Part Number DNA30EM2200PZ
Manufacturers IXYS
Logo IXYS
Description High Voltage Standard Rectifier
Datasheet DNA30EM2200PZ DatasheetDNA30EM2200PZ Datasheet (PDF)

High Voltage Standard Rectifier Single Diode Part number DNA30EM2200PZ 1 4 3 DNA30EM2200PZ VRRM I FAV VF = = = 2200 V 30 A 1.24 V Backside: anode Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour Applications: ● Diode for main rectification ● For single and three phase bridge configurations Package: TO-263 (D2Pak-HV) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● High creepage di.

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High Voltage Standard Rectifier Single Diode Part number DNA30EM2200PZ 1 4 3 DNA30EM2200PZ VRRM I FAV VF = = = 2200 V 30 A 1.24 V Backside: anode Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour Applications: ● Diode for main rectification ● For single and three phase bridge configurations Package: TO-263 (D2Pak-HV) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● High creepage distance between terminals IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130325a Rectifier Symbol VRSM VRRM IR VF I FAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current VR = 2200 V VR = 2200 V forward voltage drop IF = 30 A IF = 60 A IF = 30 A IF = 60 A average forward current TC = 140°C rectangular d = 0.5 VF0 rF R thJC R thCH Ptot I FSM threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine I²t value for fusing t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine CJ junction capacitance VR = 700 V; f = 1 MHz DNA30EM2200PZ TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C TVJ = 150 °C TVJ = 175°C Ratings min. typ. max. 2300 2200 40 1.5 1.26 1.53 1.24 1.63 30 Unit V V µA mA V V V V A TVJ = 175°C TC = 25°C TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 25°C 0.25 7 0.83 V 13.4 mΩ 0.7 K/W K/W 210 W 370 A 400 A 315 A 340 A 685 A²s 665 A²s 495 A²s 480 A²s pF IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130325a Package TO-263 (D2Pak-HV) Symbol Definition I RMS TVJ T op Tstg Weight RMS current virtual junction temperature operation temperature storage temperature Conditions per terminal FC d Spp/App d Spb/Apb mounting force with clip creepage distance on surface | striking distance through air DNA30EM2200PZ terminal to terminal terminal to backside Ratings min. typ. max. 35 -55 175 -55 150 -55 150 1.5 20 60 4.2 4.7 Unit A °C °C °C g N mm mm Product Marking Part No. Logo Assembly Line Date Code Assembly Code XXXXXXXXX IXYS Zyyww 000000 Part number D = Diode N = High Voltage Standard Rectifier A = (>= 2000V) 30 = Current Rating [A] EM = Single Diode 2200 = Reverse Voltage [V] PZ = TO-263AB (D2Pak) (2HV) Ordering Standard Part Number DNA30EM2200PZ Marking on Product DNA30EM2200PZ Delivery Mode Tape & Reel Quantity Code No. 800 514467 Similar Part DNA30E2200PZ DNA30E2200PA DNA30E2200FE DNA30E2200IY Package TO-263AB (D2Pak) (2HV) TO-220AC i4-Pac (2HV) TO-262 (I2Pak) (2HV) Voltage class 2200 2200 2200 2200 Equivalent Circuits for Simulation I V0 R0 Rectifier V 0 max R0 max threshold voltage slope resistance * 0.83 10.2 * on die level T VJ = 175 °C V mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130325a DNA30EM2200PZ Outlines TO-263 (D2Pak-HV) WA c2 E D L1 13 e1 2x e A1 H A2 L 10.92 (0.430) c 2x b2 mm (Inches) Supplier Option 4 2x b E1 D2 D1 Dim. Millimeter min max Inches min max A 4.06 4.83 0.160 0.190 A1 typ. 0.10 typ. 0.004 A2 2.41 0.095 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.055 D 8.38 9.40 0.330 0.370 D1 8.00 8.89 0.315 0.350 D2 2.3 0.091 E 9.65 10.41 0.380 0.410 E1 6.22 8.50 0.245 0.335 e 2,54 BSC 0,100 BSC e1 4.28 0.169 H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 1.02 1.68 0.040 0.066 W typ. 0.02 0.040 typ. 0.0008 0.002 All dimensions conform with and/or within JEDEC standard. 9.02 (0.355) 3.81 (0.150) 1.78 (0.07) 2.54 (0.100) 3.05 (0.120) Recommended min. foot print 1 4 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130325a DNA30EM2200PZ Rectifier 60 300 103 VR = 0 V 40 IF 250 IFSM TVJ = 45°C [A] 20 [A] 200 TVJ = 150°C TVJ = 150°C TVJ = 125°C TVJ = 25°C 0 0.5 1.0 1.5 2.0 VF [V] Fig. 1 Forward current versus voltage drop per diode 50 Hz, 80% VRRM 150 0.001 0.01 0.1 1 t [s] Fig. 2 Surge overload current I2t [A2s] TVJ = 45°C TVJ = 150°C 102 1 2 3 4 5 6 7 8 910 t [ms] Fig. 3 I2t versus time per diode 50 40 30 Ptot 20 [W] dc = 1 0.5 0.4 0.33 0.17 0.08 10 RthKA = 0.6 K/W 0.8 K/W 1.0.


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