Rectifier Diode
DSI 30
Rectifier Diode ISOPLUS220TM
Electrically Isolated Back Surface
VRRM = 800 - 1200 V IF(AV)M = 30 A
VRSM V
900 ...
Description
DSI 30
Rectifier Diode ISOPLUS220TM
Electrically Isolated Back Surface
VRRM = 800 - 1200 V IF(AV)M = 30 A
VRSM V
900 1300
VRRM V
800 1200
Type
DSI 30-08AC DSI 30-12AC
ISOPLUS 220TM
AC
Preliminary Data Sheet
C A
Isolated back surface*
Symbol IFRMS IFAV IFSM
I2t
TVJ TVJM Tstg TL VISOL FC Weight
Conditions
TC = 95°C; 180O sine (RMS current limited)
TVJ = 45°C; t = 10 ms (50 Hz), sine VR = 0 V; t = 8.3 ms (60 Hz), sine
TVVRJ
= 150°C; t = 10 ms = 0 V; t = 8.3 ms
(50 Hz), sine (60 Hz), sine
TVVRJ
= 45°C; = 0 V;
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
TVVRJ
= 150°C; t = 10 ms = 0 V; t = 8.3 ms
(50 Hz), sine (60 Hz), sine
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
60 A 30 A
200 A 210 A
175 A 185 A
200 A2s 185 A2s
155 A2s 145 A2s
Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance(15pF typical) International standard package Epoxy meets UL 94V-0
ISOPLUS220 Outline (2 leads)
-55...+150 150
-55...+150
°C °C °C
260 °C
50/60 Hz RMS; IISOL ≤ 1 mA Mounting Force typical
2500 11...65 / 2.4...11
2
V~ N / ib
g
Symbol
IR
VF rVTTO RthJC RthCH
Conditions
TVJ = 25°C; VR = VRRM TVJ = TVJM; VR = VRRM IF = 45 A; TVJ = 25°C For power loss calculations only TVJ = TVJM
Characteristic Values typ. max.
0.05 1.5
mA mA
1.45 V
0.80 V 15 mΩ
1.1 K/W 0.6 K/W
Note: See DSI 30..A data sheet for electrical characteristic curves.
IXYS reserves...
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