CMPF4393

CMPF4391 CMPF4392 CMPF4393 SURFACE MOUNT SILICON N-CHANNEL JFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPF4391 series devices are silicon N-Channel Field Effect Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for switching applications. SOT-23 CASE MARKING CODE: CMPF4391: 6J CMPF4392: 6K CMPF4393: 6G MAXIMUM RATINGS: (TA=25°C) Drain-Gate Voltage Gate-Source Voltage Drain-Source Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VGD VGS VDS IG PD TJ, Tstg ΘJA 40 40 40 50 350 -65 to +150 357 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMPF4391 CMPF4392 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS IGSS IDSS ID(OFF) ID(OFF) ID(OFF) ID(OFF) ID(OFF) ID(OFF) BVGSS VGS(OFF) VGS(f) VDS(ON) VDS(ON) VDS(ON) rDS(ON) rds(ON) Ciss VGS=20V VGS=20V, TA=100°C VDS=20V VDS=20V, VGS=12V VDS=20V, VGS=7.0V VDS=20V, VGS=5.0V VDS=20V, VGS=12V, TA=100°C VDS=20V, VGS=7.0V, TA=100°C VDS=20V, VGS=5.0V, TA=100°C IG=1.0µA VDS=20V, ID=1.0nA IG=1.0mA ID=12mA ID=6.0mA ID=3.0mA ID=1.0mA, VGS=0 VGS=0, ID=0, f=1.0kHz VDS=20V, VGS=0, f=1.0MHz - 0.5 - 0.2 50 150 - 0.1 --- 0.2 --40 4.0 10 - 1.0 - 0.4 --- 30 - 30 - 14 - 0.5 - 0.2 25 75 -- 0.1 --- 0.2 -40 2.0 5.0 - 1.0 -- 0.4 -- 60 - 60 - 14 CMPF4393 MIN MAX - 0.5 - 0.2 5.0 30 --- 0.1 --- 0.2 40 0.5 3.0 - 1.0 --- 0.4 - 100 - 100 - 14 UNITS nA µA mA nA nA ...