CMPD6001A

CMPD6001 CMPD6001A CMPD6001C CMPD6001S SURFACE MOUNT LOW LEAKAGE SWITCHING DIODE Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMPD6001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring a extremely low leakage diode. The following configurations are available: SOT-23 CASE CMPD6001 CMPD6001A CMPD6001C CMPD6001S MAXIMUM RATINGS: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES (TA=25°C) MARKING MARKING MARKING MARKING CODE: CODE: CODE: CODE: ULO ULA ULC ULS Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 µsec. Forward Surge Current, tp=1 sec. Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IF IFRM IFSM IFSM PD TJ,Tstg ΘJA 75 100 250 250 4000 1000 350 -65 to +150 357 UNITS V V mA mA mA mA mW °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL IR VBR VF VF VF CT trr TEST CONDITIONS VR=75V IR=100µA IF=1.0mA IF=10mA IF=100mA VR=0, f =1.0 MHz IR=IF=10mA, RL=100Ω, Rec. to 1.0mA MIN 100 0.85 0.95 1.1 2.0 3.0 MAX 500 UNITS pA V V V V pF µs R1 ( 01-Mar 2001) Central TM Semiconductor Corp. CMPD6001 CMPD6001A CMPD6001C CMPD6001S SURFACE MOUNT LOW LEAKAGE SWITCHING DIODE SOT-23 CASE - MECHANICAL OUTLINE Pin Configuration N.C. A C1 C2 A1 A2 C1 A2 C CMPD6001 A1, A2 CMPD600...