SILICON SWITCHING DIODE
CMPD3003 CMPD3003A CMPD3003C CMPD3003S
SURFACE MOUNT LOW LEAKAGE
SILICON SWITCHING DIODE
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Description
CMPD3003 CMPD3003A CMPD3003C CMPD3003S
SURFACE MOUNT LOW LEAKAGE
SILICON SWITCHING DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD3003 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring an extremely low leakage diode.
SOT-23 CASE
The following configurations are available:
CMPD3003 SINGLE
MARKING CODE: LLO
CMPD3003A DUAL, COMMON ANODE MARKING CODE: LLA
CMPD3003C DUAL, COMMON CATHODE MARKING CODE: LLC
CMPD3003S DUAL, IN SERIES
MARKING CODE: LLS
MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Average Forward Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0µs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
VR IO IF IFRM IFSM IFSM PD TJ, Tstg ΘJA
180 200 600 700 2.0 1.0 350 -65 to +150 357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN MAX
IR IR IR IR BVR VF VF VF VF VF VF CT
VR=125V VR=125V, TA=150°C VR=180V VR=180V, TA=150°C IR=5.0µA IF=1.0mA IF=10mA IF=50mA IF=100mA IF=200mA IF=300mA VR=0, f=1.0MHz
1.0 3.0 10 5.0 200 0.62 0.72 0.72 0.83 0.80 0.89 0.83 0.93 0.87 1.10 0.90 1.15 4.0
UNITS V mA mA mA A A
mW °C °C/W
UNITS nA µA nA µA V V V V V V V pF
R4 (25-January 2010)
CMPD3003 CMPD3003A CMPD3003C CMPD3003S
SURFACE MOUNT LOW LEAKAGE
SILICON SWITCHING DIODE
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