CMPD3003

CMPD3003 CMPD3003A CMPD3003C CMPD3003S SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD3003 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring an extremely low leakage diode. SOT-23 CASE The following configurations are available: CMPD3003 SINGLE MARKING CODE: LLO CMPD3003A DUAL, COMMON ANODE MARKING CODE: LLA CMPD3003C DUAL, COMMON CATHODE MARKING CODE: LLC CMPD3003S DUAL, IN SERIES MARKING CODE: LLS MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Average Forward Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0µs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR IO IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 180 200 600 700 2.0 1.0 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR IR IR IR BVR VF VF VF VF VF VF CT VR=125V VR=125V, TA=150°C VR=180V VR=180V, TA=150°C IR=5.0µA IF=1.0mA IF=10mA IF=50mA IF=100mA IF=200mA IF=300mA VR=0, f=1.0MHz 1.0 3.0 10 5.0 200 0.62 0.72 0.72 0.83 0.80 0.89 0.83 0.93 0.87 1.10 0.90 1.15 4.0 UNITS V mA mA mA A A mW °C °C/W UNITS nA µA nA µA V V V V V V V pF R4 (25-January 2010) CMPD3003 CMPD3003A CMPD3003C CMPD3003S SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE S...