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DSA80C45HB Dataheets PDF



Part Number DSA80C45HB
Manufacturers IXYS
Logo IXYS
Description Schottky Diode
Datasheet DSA80C45HB DatasheetDSA80C45HB Datasheet (PDF)

Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA80C45HB 1 23 DSA80C45HB VRRM I FAV VF preliminary = 45 V = 2x 40 A = 0.69 V Backside: cathode Features / Advantages: ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching Applications: ● Rectifiers in switch mode power supplies (SMPS).

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Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA80C45HB 1 23 DSA80C45HB VRRM I FAV VF preliminary = 45 V = 2x 40 A = 0.69 V Backside: cathode Features / Advantages: ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching Applications: ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters Package: TO-247 ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131030a Schottky Symbol VRSM VRRM IR VF I FAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current, drain current VR = 45 V VR = 45 V forward voltage drop IF = 40 A IF = 80 A IF = 40 A IF = 80 A average forward current TC = 150°C rectangular d = 0.5 VF0 rF R thJC R thCH Ptot I FSM CJ threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current junction capacitance t = 10 ms; (50 Hz), sine; VR = 0 V VR = 5 V f = 1 MHz DSA80C45HB TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C TVJ = 175°C preliminary Ratings min. typ. max. 45 45 680 7.5 0.78 0.99 0.69 0.90 40 Unit V V µA mA V V V V A TVJ = 175°C TC = TVJ = TVJ = 25°C 45°C 25°C 0.25 1.38 0.43 V 5.1 mΩ 0.7 K/W K/W 215 W 600 A nF IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131030a Package TO-247 Symbol Definition I RMS TVJ T op Tstg Weight RMS current virtual junction temperature operation temperature storage temperature MD mounting torque F C mounting force with clip Product Marking Logo Part No. Assembly Line Assembly Code Date Code IXYS XXXXXXXXX Zyyww abcd Conditions per terminal 1) Part number D = Diode S = Schottky Diode A = low VF 80 = Current Rating [A] C = Common Cathode 45 = Reverse Voltage [V] HB = TO-247AD (3) DSA80C45HB preliminary Ratings min. typ. max. Unit 70 A -55 175 °C -55 150 °C -55 150 °C 6g 0.8 1.2 Nm 20 120 N Ordering Standard Part Number DSA80C45HB Marking on Product DSA80C45HB Delivery Mode Tube Quantity Code No. 30 504890 Equivalent Circuits for Simulation I V0 R0 Schottky V 0 max R0 max threshold voltage slope resistance * 0.43 2.5 * on die level T VJ = 175 °C V mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131030a Outlines TO-247 E Q A A2 ØP S 2x E2 D 123 L1 L 2x b2 b4 2x e 3x b C A1 DSA80C45HB preliminary Ø P1 D2 D1 4 E1 Sym. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 Inches min. max. 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 - 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 - - 0.29 Millimeter min. max. 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 - 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 - 0.51 1.35 13.45 - - 7.39 1 23 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131030a .


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