PCRKA20065F8

PCRKA20065F8 650V/200A Extremefast Diode PCRKA20065F8 650V / 200A Extremefast Diode Features „ AEC-Q101 Qualified „ Maximum Junction Temperature 175°C „ Extremefast technology with Soft Recovery „ Low Forward Voltage (VF = 1.35V (Typ) @IF = 200A) Applications „ Automotive Traction Modules „ General Power Modules April 2016 Ordering Information P/N Packing Die Size Anode Area Die thickness Top Metal Back Metal Topside Passivation Wafer diameter Max. Possible Die per Wafer PCRKA20065F8 Wafer (Saw-On-Foil) mils mm 197 X 394 5,000 X 10,000 176 X 373 4,478 X 9,475 3 77± 8 Al (0.5% Cu) VNi/Ag Silicon Nitride Plus Polymide 200mm 487 ©2016 Fairchild Semiconductor Corporation PCRKA20065F8 Rev. 1.0 1 www.fairchildsemi.com PCRKA20065F8 650V/200A Extremefast Diode Absolute Maximum Ratings (TVJ =25oC unless otherwise specified) Symbol VR IF TVJ Tstg Parameter VoltageCathodetoAnode Continous foeward current Junction Temperature Range Operating Junction Temperature Storage Temperature Range Ratings 650 (Note 1) -55 to +175 -55 to +150 +17 to +25 Notes: 1: Depends on the thermal properties of assembly Units V A oC oC oC Electrical Characteristics of the Diode (TVJ =25oC unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Static Characteristics (tested on wafer) IR Reverse Current VR = 650V - - 30 VBR Breakdown Voltage IR = 1mA 650 - - VF Forward Voltage IF = 100A 0.7 1.15 1.7 Electrical Characteristics (not subject to production t...