Document
SANGDEST MICROELECTRONICS
Technical Data Data Sheet N0873, Rev. -
Applications:
SB1100 SCHOTTKY RECTIFIER
z Switching power supply z Converters z Free-Wheeling diodes z Reverse battery protection z Disk drives z Battery charging
Features:
z Schottky Barrier Chip z Ideally Suited for Automatic Assembly z Low Power Loss, High Efficiency z Surge Overload Rating to 50A Peak z For Use in Low Voltage Application z Guard Ring Die Construction z Plastic Case Material has UL Flammability z Classification Rating 94V-O z Green Products in Compliance with the RoHS Directive z This is a Pb − Free Device z All SMC parts are traceable to the wafer lot z Additional testing can be offered upon request
Mechanical Dimensions: In mm
SB1100
Green Products
CATHODE BAND
5.21 (0.205) 4.06 (0.160)
25.4(1.00) MIN (2 PLCS)
1.27(0.050) MAX FLASH(2 PLCS)
CATHODE
0.864 0.71
(0.034) (0.028)
DIA
(2 PLCS)
ANODE
2.70(0.106) 2.00(0.079) DIA
DO-41
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST MICROELECTRONICS
Technical Data Data Sheet N0873, Rev. -
Marking Diagram:
SB1100
Green Products
Cautions:Molding resin
Epoxy resin UL:94V-0
Where XXXXX is YYWWL
SB 1 100 SSG YY WW
L
= Device Type = Forward Current (1A) = Reverse Voltage (100V) = SSG = Year = Week = Lot Number
Ordering Information:
Device
SB1100
Package
DO-41 (Pb-Free)
Shipping
5000pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification.
Maximum Ratings:
Characteristics Peak Inverse Voltage Max. Average Forward
Max. Peak One Cycle Non-Repetitive Surge Current
Symbol VRWM IF(AV)
IFSM
Condition -
50% duty cycle @TC =105℃ rectangular wave form(L=0.375”)
8.3 ms, half Sine pulse
Max. 100 1.0
26
Units V A
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST MICROELECTRONICS
Technical Data Data Sheet N0873, Rev. -
Electrical Characteristics:
Characteristics Max. Forward Voltage Drop
Max. Reverse Current Typical Junction Capacitance
* Pulse Width < 300µs, Duty Cycle <2%
Symbol VF1 VF2 IR1
Cj
Condition @ 1.0A, Pulse, TJ = 25℃ @ 1.0A, Pulse, TJ = 125℃
@VR = rated VR TJ = 25℃ @VR = 5.0 V, Tc=25℃ fSIG = 1MHz
SB1100
Green Products
Max. 0.85 0.75 1.0
80
Units V
mA pF
Thermal-Mechanical Specifications:
Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance, Case to Heat Sink Approximate Weight Case Style
Symbol TJ Tstg
RθJC
Condition -
DC operation
RθJA DC operation
wt DO-41
Specification -55 to +150 -55 to +150
15
Units °C °C
°C/W
65 0.35
°C/W g
.