SILICON CONTROLLED RECTIFIERS
DIGITRON
2N4212-2N4216, 2N4219
SEMICONDUCTORS
SILICON CONTROLLED RECTIFIERS 1.6 AMPS RMS, 25-400 VOLTS
Available Non-R...
Description
DIGITRON
2N4212-2N4216, 2N4219
SEMICONDUCTORS
SILICON CONTROLLED RECTIFIERS 1.6 AMPS RMS, 25-400 VOLTS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Peak repetitive forward and reverse blocking voltage (1) 2N4212 2N4213 2N4214 2N4215 2N4216 2N4219
VDRM or VRRM
Forward current RMS (All conduction angles)
IT(RMS)
Peak surge current (One cycle, 60Hz) No repetition until thermal equilibrium is restored
ITSM
Forward peak gate power
PGFM
Forward average gate power
PGF(AV)
Forward peak gate current
IGFM
Forward peak gate voltage
VGFM
Reverse peak gate voltage
VGRM
Operating junction temperature range
TJ
Storage temperature range
Tstg
Lead solder temperature (> 1/16” from case, 10 s max.)
-
Note 1: VDRM and VRRM can be applied for all types on a continuous dc basis without incurring damage.
Value
25 50 100 150 200 400
1.6
15
0.1 0.01 0.1
6 6 -65 to 125 -65 to 150
230
Unit
Volts
Amps
Amps Watt Watt Amp Volts Volts
°C °C °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted, RGK = 1000ohms)(1)
Characteristic
Symbol
Min
Max
Unit
Peak forward or reverse blocking current (Rated VDRM or VRRM, gate open)
TJ = 25°C TJ = 125°C
IDRM, IRRM
- 10 µA - 200
Forward “on” voltage (ITM = 1Adc peak)
Gate trigger current (continuous dc)(2) (VD = 7V, RL = 100ohms)
TC = 25°C TC = -65°C
VTM I...
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