2N4212

DIGITRON 2N4212-2N4216, 2N4219 SEMICONDUCTORS SILICON CONTROLLED RECTIFIERS 1.6 AMPS RMS, 25-400 VOLTS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Peak repetitive forward and reverse blocking voltage (1) 2N4212 2N4213 2N4214 2N4215 2N4216 2N4219 VDRM or VRRM Forward current RMS (All conduction angles) IT(RMS) Peak surge current (One cycle, 60Hz) No repetition until thermal equilibrium is restored ITSM Forward peak gate power PGFM Forward average gate power PGF(AV) Forward peak gate current IGFM Forward peak gate voltage VGFM Reverse peak gate voltage VGRM Operating junction temperature range TJ Storage temperature range Tstg Lead solder temperature (> 1/16” from case, 10 s max.) - Note 1: VDRM and VRRM can be applied for all types on a continuous dc basis without incurring damage. Value 25 50 100 150 200 400 1.6 15 0.1 0.01 0.1 6 6 -65 to 125 -65 to 150 230 Unit Volts Amps Amps Watt Watt Amp Volts Volts °C °C °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted, RGK = 1000ohms)(1) Characteristic Symbol Min Max Unit Peak forward or reverse blocking current (Rated VDRM or VRRM, gate open) TJ = 25°C TJ = 125°C IDRM, IRRM - 10 µA - 200 Forward “on” voltage (ITM = 1Adc peak) Gate trigger current (continuous dc)(2) (VD = 7V, RL = 100ohms) TC = 25°C TC = -65°C VTM I...