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CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP
ENHANCED SPECIFICATION SURFACE MOUNT SILICON
COMPLEMENTARY TRANSISTORS
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DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual, enhanced specification transistors in a space saving SOT-563 package, designed for small signal general purpose amplifier and switching applications.
SOT-563 CASE
* Device is Halogen Free by design
ENHANCED SPECIFICATIONS: ♦ BVCBO from 40V MIN to 60V MIN (PNP) ♦ BVEBO from 5.0V MIN to 6.0V MIN (PNP)
MARKING CODES: CMLT3904E: CMLT3906E: CMLT3946E: CMLT3904EG*: CMLT3906EG*: CMLT3946EG*:
L04 L06 L46 C4G C6G 46G
♦ hFE from 60 MIN to 70 MIN (NPN/PNP) ♦ VCE(SAT) from 0.3V MAX to 0.2V MAX (NPN)
from 0.4V MAX to 0.2V MAX (PNP)
MAXIMUM RATINGS: (TA=25°C) ♦Collector-Base Voltage
SYMBOL VCBO
60
Collector-Emitter Voltage ♦Emitter-Base Voltage
VCEO VEBO
40 6.0
Continuous Collector Current
IC 200
Power Dissipation (Note 1)
PD 350
Power Dissipation (Note 2)
PD 300
Power Dissipation (Note 3)
PD 150
Operating and Storage Junction Temperature Thermal Resistance
TJ, Tstg ΘJA
-65 to +150 357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) NPN
PNP
SYMBOL
TEST CONDITIONS
MIN TYP
TYP MAX
ICEV ♦BVCBO
VCE=30V, VEB=3.0V IC=10μA
-60 115
- 50 90 -
BVCEO ♦BVEBO
♦VCE(SAT) ♦VCE(SAT)
IC=1.0mA IE=10μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA
40 60 6.0 7.5
- 0.057 - 0.100
55 7.9 0.050 0.100
0.100 0.200
VBE(SAT)
IC=10mA, IB=1.0mA
0.65 0.75
0.75 0.85
VBE(SAT) ♦hFE ♦hFE
IC=50mA, IB=5.0mA VCE=1.0V, IC=0.1mA VCE=1.0V, IC=1.0mA
- 0.85 90 240 100 235
0.85 0.95 130 150 -
hFE ♦hFE
VCE=1.0V, IC=10mA VCE=1.0V, IC=50mA
100 215 70 110
150 300 120 -
hFE VCE=1.0V, IC=100mA
30 50
♦ Enhanced Specification
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2
55
-
UNITS V V V mA
mW mW mW °C °C/W
UNITS nA V V V V V V V
R6 (29-June 2015)
CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP
ENHANCED SPECIFICATION SURFACE MOUNT SILICON
COMPLEMENTARY TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C)
SYMBOL TEST CONDITIONS
MIN MAX
fT VCE=20V, IC=10mA, f=100MHz Cob VCB=5.0V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz hie VCE=10V, IC=1.0mA, f=1.0kHz hre VCE=10V, IC=1.0mA, f=1.0kHz hfe VCE=10V, IC=1.0mA, f=1.0kHz hoe VCE=10V, IC=1.0mA, f=1.0kHz NF VCE=5.0V, IC=100μA, RS =1.0kΩ
f=10Hz to 15.7kHz
300 4.0 8.0
1.0 12 0.1 10 100 400 1.0 60
4.0
td VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA tr VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA ts VCC=3.0V, IC=10mA, IB1=IB2=1.0mA tf VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
35 35 200 50
SOT-563 CASE - MECHANICAL OUTLINE
UNITS MHz pF pF kΩ x10-4
μS
dB ns ns ns ns
CMLT3904E CMLT3904EG*
CMLT3906E CMLT3906EG*
* Device is Halogen Free by design
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LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1
CMLT3946E CMLT3946EG*
R6 (29-June 2015)
CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP
ENHANCED SPECIFICATION SURFACE MOUNT SILICON
COMPLEMENTARY TRANSISTORS
SERVICES • Bonded Inventory • Custom Electrical Screening • Custom Electrical Characteristic Curves • SPICE Models • Custom Packaging • Package Base Options • Custom Device Development / Multi Discrete Modules (MDM™) • Bare Die Available for Hybrid Applications
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