CMLT3904E

CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP ENHANCED SPECIFICATION SURFACE MOUNT SILICON COMPLEMENTARY TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual, enhanced specification transistors in a space saving SOT-563 package, designed for small signal general purpose amplifier and switching applications. SOT-563 CASE * Device is Halogen Free by design ENHANCED SPECIFICATIONS: ♦ BVCBO from 40V MIN to 60V MIN (PNP) ♦ BVEBO from 5.0V MIN to 6.0V MIN (PNP) MARKING CODES: CMLT3904E: CMLT3906E: CMLT3946E: CMLT3904EG*: CMLT3906EG*: CMLT3946EG*: L04 L06 L46 C4G C6G 46G ♦ hFE from 60 MIN to 70 MIN (NPN/PNP) ♦ VCE(SAT) from 0.3V MAX to 0.2V MAX (NPN) from 0.4V MAX to 0.2V MAX (PNP) MAXIMUM RATINGS: (TA=25°C) ♦Collector-Base Voltage SYMBOL VCBO 60 Collector-Emitter Voltage ♦Emitter-Base Voltage VCEO VEBO 40 6.0 Continuous Collector Current IC 200 Power Dissipation (Note 1) PD 350 Power Dissipation (Note 2) PD 300 Power Dissipation (Note 3) PD 150 Operating and Storage Junction Temperature Thermal Resistance TJ, Tstg ΘJA -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) NPN PNP SYMBOL TEST CONDITIONS MIN TYP TYP MAX ICEV ♦BVCBO VCE=30V, VEB=3.0V IC=10μA -60 115 - 50 90 - BVCEO ♦BVEBO ♦VCE(SAT) ♦VCE(SAT) IC=1.0mA IE=10μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 40 60 6.0 7.5 - 0.057 - 0.100 55 7.9 0.050 0.100 0.100 0.200 V...