P-Channel Enhancement Mode Power MOSFET
CONSONANCE
P-Channel Enhancement Mode Power MOSFET
CN2305
General Description:
The CN2305 uses advanced trench techno...
Description
CONSONANCE
P-Channel Enhancement Mode Power MOSFET
CN2305
General Description:
The CN2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Applications:
Battery protection Load switch Power management
Pin Assignment Schematic diagram
Features:
VDS = -20V,ID = -4.1A RDS(ON) < 75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V
High power and current handing capability Lead free product is acquired Surface mount package Available in 3 pin SOT23 Package Pb-free, rohs compliant and halogen free
Top view
Ordering Information
Part Number CN2305
Device Marking 2305
www.consonance-elec.com
Package SOT-23
1
Operating Ambient Temperature -40℃ to 85℃
REV 1.0
CONSONANCE
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous Drain Current-Pulsed (Note 1)
TC =25℃ TC =70℃ TA =25℃ TA =70℃
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM PD TJ,TSTG
Limit -20 ±12 -4.1 -3.2 -3 -2.3 -15 1.2
-55 to 150
Thermal Characteristic
Unit V V
A
A W ℃
Thermal Resistance, Junction-to-Ambient (Note 2)
RθJA 100 ℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characte...
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