DatasheetsPDF.com

CN2305

CONSONANCE

P-Channel Enhancement Mode Power MOSFET

CONSONANCE P-Channel Enhancement Mode Power MOSFET CN2305 General Description: The CN2305 uses advanced trench techno...


CONSONANCE

CN2305

File Download Download CN2305 Datasheet


Description
CONSONANCE P-Channel Enhancement Mode Power MOSFET CN2305 General Description: The CN2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Applications:  Battery protection  Load switch  Power management Pin Assignment Schematic diagram Features:  VDS = -20V,ID = -4.1A RDS(ON) < 75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package  Available in 3 pin SOT23 Package  Pb-free, rohs compliant and halogen free Top view Ordering Information Part Number CN2305 Device Marking 2305 www.consonance-elec.com Package SOT-23 1 Operating Ambient Temperature -40℃ to 85℃ REV 1.0 CONSONANCE Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) TC =25℃ TC =70℃ TA =25℃ TA =70℃ Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Limit -20 ±12 -4.1 -3.2 -3 -2.3 -15 1.2 -55 to 150 Thermal Characteristic Unit V V A A W ℃ Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 100 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characte...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)