Power Transistor
FEATURES
Low VCE(sat). VCE(sat)=-0.5V(TYP.) (IC/IB=-2A/-0.2A)
Complements the 2SD1762.
Pb
Lead-fre...
Power
Transistor
FEATURES
Low VCE(sat). VCE(sat)=-0.5V(TYP.) (IC/IB=-2A/-0.2A)
Complements the 2SD1762.
Pb
Lead-free
Production specification
2SB1185
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60 V
VCEO VEBO IC PC Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current
Collector Dissipation
DC Pulse
Junction and Storage Temperature
-50 V
-5 V
-3 A
-4.5
2W
-55 to +150 ℃
X016 Rev.A
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1
Production specification
Power
Transistor
2SB1185
ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-base Breakdown Voltage
V(BR)CBO IC=-50μA,IE=0
-60
V
Collector-emitter Breakdown Voltage V(BR)CEO IC=-1mA,IB=0
-50
V
Emitter-base Breakdown Voltage
V(BR)EBO IE=-50μA,IC=0
-5
V
Collector Cut-off Current
ICBO VCB=-40V,IE=0
-1 μA
E...
