UTC 9015
PNP EPITAXIAL SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
FEATURES
*High total power dissipation...
UTC 9015
PNP EPITAXIAL SILICON
TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
FEATURES
*High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC 9014
1
TO-92
1: EMITTER
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
-50
Collector-emitter voltage
VCEO
-45
Emitter-base voltage
VEBO
-5
Collector current
Ic -100
Collector dissipation
Pc 450
Junction Temperature
Tj 150
Storage Temperature
TSTG
-55 ~ +150
2: BASE
3: COLLECTOR
UNIT V V V mA
mW °C °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage
BVCBO
Ic=-100µA, IE=0
-50
Collector-emitter breakdown voltage BVCEO
Ic=-1mA, IB=0
-45
Emitter-base breakdown voltage
BVEBO
IE=-100µA, Ic=0
-5
Collector cutoff current
ICBO
VCB=-50V, IE=0
Emitter cutoff current
IEBO
VEB=-5V, IC=0
DC current gain
hFE
VCE=-5V, Ic=-1mA
60
Collector-emitter saturation voltage VCE(sat)
Ic=-100mA, IB=-5mA
Base-emitter saturation voltage
VBE(sat)
Ic=-100mA, IB=-5mA
Base-emitter on voltage
VBE(on)
VCE=-5V, Ic=-2mA
-0.6
Output Capacitance
Cob VCB=-10V, IE=0, f=1MHz
Current gain-Bandwidth Porduct
fT
VCE=-5V, Ic=-10mA
100
Noise Figure
NF VCE=-5V, Ic=-0.2mA
f=1KHz, Rs=1KΩ
TYP
200 -0.2 -0.82 -0.65 4.5 190 0.7
MAX
-50 -100 600 -0.7 -1.0 -0.75 7.0
10
UNIT V V V nA nA
V V V pF MHz dB
CLASSIFICATION OF hFE
RANK
A...