Document
SSM04N70BGP-A N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
650V
R DS(ON)
2.4Ω
I D 4A
Pb-free; RoHS-compliant TO-220
G D S
TO-220 (suffix P)
DESCRIPTION
The SSM04N70BGP-A achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits.
The SSM04N70BGP-A is in TO-220 for through-hole mounting where a small footprint is required on the board, and/or an external heatsink is to be attached.
These devices are manufactured with an advanced process, providing improved on-resistance and switching performance.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS VGS ID
IDM PD
EAS IAR EAR TSTG TJ
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 100°C
Total power dissipation, TC = 25°C Linear derating factor Single pulse avalanche energy3
Avalanche current
Repetitive avalanche energy
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
Parameter
RΘJC RΘJA
Maximum thermal resistance, junction-case Maximum thermal resistance, junction-ambient
Notes:
1. Pulse width must be limited to avoid exceeding the safe operating area.
2. Pulse width <300us, duty cycle <2%. 3. Starting Tj = 25°C, VDD=50V , L=25mH , RG=25Ω , IAS= 4A.
9/29/2006 Rev.3.1
www.SiliconStandard.com
Value 650 ±30 4 2.5 15 62.5 0.5 100
4 4 -55 to 150 -55 to 150
Value 2 62
Units V V A A A W
W/°C mJ A mJ °C °C
Units °C/W °C/W
1 of 7
SSM04N70BGP-A
ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified)
Symbol BVDSS ∆ BV DSS/∆ Tj RDS(ON)
Parameter Drain-source breakdown voltage
Breakdown voltage temperature coefficient
Static drain-source on-resistance
Test Conditions VGS=0V, ID= 1mA Reference to 25°C, ID=1mA VGS=10V, ID=2A
Min. Typ. Max. Units 650 - - V
- 0.6 - V/°C - - 2.4 Ω
VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate threshold voltage Forward transconductance Drain-source leakage current
Gate-source leakage current Total gate charge 2 Gate-source charge Gate-drain ("Miller") charge Turn-on delay time 2 Rise time Turn-off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance
VDS=VGS, ID=250uA VDS=20V, ID=1A VDS=600V, VGS=0V VDS=480V ,VGS=0V, Tj = 150°C VGS=±30V ID=4A VDS=480V VGS=10V VDS=300V ID=4A RG=10Ω , VGS=10V RD=75Ω VGS=0V VDS=25V f=1.0MHz
2 - 4V
- 2.5 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 16.7 - nC
- 4.1 - nC
- 4.9 - nC
- 11 - ns
- 8.3 - ns
- 23.8 - ns
- 8.2 - ns
- 950 - pF
- 65 - pF
- 6 - pF
Source-Drain Diode
Symbol VSD IS I SM
Parameter Forward voltage 2
Continuous source current (body diode) Pulsed source current (body diode)1
Test Conditions IS= 4A, VGS=0V VD=VG=0V , VS=1.3V
Min. Typ. Max. Units - - 1.5 V - - 4A - - 15 A
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature.