DatasheetsPDF.com

SSM04N70BGP-A Dataheets PDF



Part Number SSM04N70BGP-A
Manufacturers Silicon Standard
Logo Silicon Standard
Description N-channel Enhancement-mode Power MOSFET
Datasheet SSM04N70BGP-A DatasheetSSM04N70BGP-A Datasheet (PDF)

SSM04N70BGP-A N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 650V R DS(ON) 2.4Ω I D 4A Pb-free; RoHS-compliant TO-220 G D S TO-220 (suffix P) DESCRIPTION The SSM04N70BGP-A achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. The SSM04N70BGP-A is in TO-220 for through-hole mounting where a small footprint is required on t.

  SSM04N70BGP-A   SSM04N70BGP-A



Document
SSM04N70BGP-A N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 650V R DS(ON) 2.4Ω I D 4A Pb-free; RoHS-compliant TO-220 G D S TO-220 (suffix P) DESCRIPTION The SSM04N70BGP-A achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. The SSM04N70BGP-A is in TO-220 for through-hole mounting where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS VGS ID IDM PD EAS IAR EAR TSTG TJ Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C Pulsed drain current1 TC = 100°C Total power dissipation, TC = 25°C Linear derating factor Single pulse avalanche energy3 Avalanche current Repetitive avalanche energy Storage temperature range Operating junction temperature range THERMAL CHARACTERISTICS Symbol Parameter RΘJC RΘJA Maximum thermal resistance, junction-case Maximum thermal resistance, junction-ambient Notes: 1. Pulse width must be limited to avoid exceeding the safe operating area. 2. Pulse width <300us, duty cycle <2%. 3. Starting Tj = 25°C, VDD=50V , L=25mH , RG=25Ω , IAS= 4A. 9/29/2006 Rev.3.1 www.SiliconStandard.com Value 650 ±30 4 2.5 15 62.5 0.5 100 4 4 -55 to 150 -55 to 150 Value 2 62 Units V V A A A W W/°C mJ A mJ °C °C Units °C/W °C/W 1 of 7 SSM04N70BGP-A ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified) Symbol BVDSS ∆ BV DSS/∆ Tj RDS(ON) Parameter Drain-source breakdown voltage Breakdown voltage temperature coefficient Static drain-source on-resistance Test Conditions VGS=0V, ID= 1mA Reference to 25°C, ID=1mA VGS=10V, ID=2A Min. Typ. Max. Units 650 - - V - 0.6 - V/°C - - 2.4 Ω VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate threshold voltage Forward transconductance Drain-source leakage current Gate-source leakage current Total gate charge 2 Gate-source charge Gate-drain ("Miller") charge Turn-on delay time 2 Rise time Turn-off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance VDS=VGS, ID=250uA VDS=20V, ID=1A VDS=600V, VGS=0V VDS=480V ,VGS=0V, Tj = 150°C VGS=±30V ID=4A VDS=480V VGS=10V VDS=300V ID=4A RG=10Ω , VGS=10V RD=75Ω VGS=0V VDS=25V f=1.0MHz 2 - 4V - 2.5 - S - - 10 uA - - 100 uA - - ±100 nA - 16.7 - nC - 4.1 - nC - 4.9 - nC - 11 - ns - 8.3 - ns - 23.8 - ns - 8.2 - ns - 950 - pF - 65 - pF - 6 - pF Source-Drain Diode Symbol VSD IS I SM Parameter Forward voltage 2 Continuous source current (body diode) Pulsed source current (body diode)1 Test Conditions IS= 4A, VGS=0V VD=VG=0V , VS=1.3V Min. Typ. Max. Units - - 1.5 V - - 4A - - 15 A Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature.


TL432 SSM04N70BGP-A 74HC4002


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)