100V N-Channel Enhancement Mode MOSFET
PPJU50N10L / PJD50N10L
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
50 A
Features
RDS(ON), VGS@10...
Description
PPJU50N10L / PJD50N10L
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
50 A
Features
RDS(ON), VGS@10V,ID@30A<22mΩ High switching speed Improved dv/dt capability Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
TO-252
TO-251AB
Mechanical Data
Case : TO-251AB, TO-252 Package Terminals : Solderable per MIL-STD-750, Method 2026 TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25oC TC=100oC
Pulsed Drain Current
TC=25oC
Power Dissipation
TC=25oC TC=100oC
Continuous Drain Current
TA=25oC TA=70oC
Power Dissipation
TA=25oC
Power Dissipation
TA=70oC
Single Pulse Avalanche Energy (Note 1)
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
Junction to Case Junction to Ambient
Limited only By Maximum Junction Temperature
SYMBOL VDS VGS ID IDM PD
ID
PD
EAS TJ,TSTG
RθJC RθJA
LIMIT
100 +20 50 32 100 96 38
8 6.5 2.5 1.6 80 -55~150 1.3 50 (Note 1)
UNITS V V
A
W A A W mJ oC oC/W
April 9,2015-REV.00
Page 1
PPJU50N10L / PJD50N10L
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State...
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