PJU50N10L

PPJU50N10L / PJD50N10L 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 50 A Features  RDS(ON), VGS@10V,ID@30A<22mΩ  High switching speed  Improved dv/dt capability  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) TO-252 TO-251AB Mechanical Data  Case : TO-251AB, TO-252 Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams  TO-252 Approx. Weight : 0.0104 ounces, 0.297grams Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25oC TC=100oC Pulsed Drain Current TC=25oC Power Dissipation TC=25oC TC=100oC Continuous Drain Current TA=25oC TA=70oC Power Dissipation TA=25oC Power Dissipation TA=70oC Single Pulse Avalanche Energy (Note 1) Operating Junction and Storage Temperature Range Typical Thermal Resistance Junction to Case Junction to Ambient  Limited only By Maximum Junction Temperature SYMBOL VDS VGS ID IDM PD ID PD EAS TJ,TSTG RθJC RθJA LIMIT 100 +20 50 32 100 96 38 8 6.5 2.5 1.6 80 -55~150 1.3 50 (Note 1) UNITS V V A W A A W mJ oC oC/W April 9,2015-REV.00 Page 1 PPJU50N10L / PJD50N10L Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State...