( DataSheet : www.DataSheet4U.com )
STP5NA80 STP5NA80FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE
ST...
( DataSheet : www.DataSheet4U.com )
STP5NA80 STP5NA80FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS
TRANSISTOR
TYPE
STP5NA80 STP5NA80FI
VDSS
800 V 800 V
RDS(on)
< 2.4 Ω < 2.4 Ω
ID
4.7 A 2.8 A
s TYPICAL RDS(on) = 1.8 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM() Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC
Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
November 1996
3 2 1
TO-220
3 2 1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
Value
STP5NA80
STP5NA80FI
800
800
± 30
4.7 2.8
3 1.8
19 19
125 45
1 0.36
2...