Document
MS13P21
P-Channel 20-V (D-S) MOSFET
Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe SC70-3 saves board space • Fast switching speed • High performance trench technology • RoHS compliant package Packing & Order Information 3,000/Reel
Graphic symbol
Publication Order Number: [MS13P21]
© Bruckewell Technology Corporation Rev. A -2014
MS13P21
P-Channel 20-V (D-S) MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Currenta (TA=25°C) Continuous Drain Currenta (TA =70°C)
IDM Pulsed Drain Currentb
IS Continuous Source Current (Diode Conduction)a
Power Dissipationa (TA =25°C) PD Power Dissipationa (TA =70°C)
TJ/TSTG
Operating Junction and Storage Temperature
Value -20 ±8 -1.7 -1.4 -2.5
±0.28 0.34 0.22 -55 to +150
Unit V V A A A A W W °C
THERMAL RESISTANCE RATINGS
Symbol
Parameter
RTHJA
Maximum Junction-to-Ambient C/Wa (t <= 5 sec) Maximum Junction-to-Ambient C/Wa (Steady-State)
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Maximum 375 430
Units °C/W
Static Symbol
VGS
Parameter Gate Threshold Voltage
Test Conditions VDS = VGS, ID =-250μA
Min Typ. Max. Units -0.4 V
IGSS Gate-Body Leakage
VDS = 0 V , VGS = ±8 V
±100 nA
IDSS ID(on)
Zero Gate Voltage Drain Current On-State Drain CurrentA
VDS = -16 V , VGS = 0 V VDS = -16 V , VGS = 0 V , TJ= 55°C VDS = -5 V, VGs = -4.5 V
-5
-1 uA -10
A
IDS(on) gfs
Drain-Source On-ResistanceA Forward TranconductanceA
VGS = -4.5 V, ID = -1.7 A VGS = -2.5 V, ID = -1.5 A VDS = -5V, ID = -1.25 A
79 mΩ 110 9S
VSD Diode Forward Voltage
IS = -0.46 V, VGS = 0 V
-0.65
V
Dynamicb Symbol Parameter td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time
Test Conditions
VDD = -10 V , IL = -1 A, VGEN = -4.5 V , RG = 6 Ω
Min Typ. Max. Units -- 10 -- ns -- 9 -- ns -- 27 -- ns -- 11 -- ns
Publication Order Number: [MS13P21]
© Bruckewell Technology Corporation Rev. A -2014
MS13P21
P-Channel 20-V (D-S) MOSFET
Dynamicb Symbol Parameter Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
Test Conditions
VDS= -10 V , ID = -1.7 A, VGS= -4.5 V
Min Typ. Max. Units -- 7.2 -- nC -- 1.7 -- nC -- 1.5 -- nC
Publication Order Number: [MS13P21]
© Bruckewell Technology Corporation Rev. A -2014
MS13P21
P-Channel 20-V (D-S) MOSFET
■Typical Electrical Characteristics
FIG.1-ON REGION CHARACTERISTICS
FIG.2-ON-RESISTANCE VARIATION WITH DRAIN CURRENT AND GATE.