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MS13P21 Dataheets PDF



Part Number MS13P21
Manufacturers Bruckewell
Logo Bruckewell
Description P-Channel MOSFET
Datasheet MS13P21 DatasheetMS13P21 Datasheet (PDF)

MS13P21 P-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadfr.

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MS13P21 P-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe SC70-3 saves board space • Fast switching speed • High performance trench technology • RoHS compliant package Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS13P21] © Bruckewell Technology Corporation Rev. A -2014 MS13P21 P-Channel 20-V (D-S) MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Currenta (TA=25°C) Continuous Drain Currenta (TA =70°C) IDM Pulsed Drain Currentb IS Continuous Source Current (Diode Conduction)a Power Dissipationa (TA =25°C) PD Power Dissipationa (TA =70°C) TJ/TSTG Operating Junction and Storage Temperature Value -20 ±8 -1.7 -1.4 -2.5 ±0.28 0.34 0.22 -55 to +150 Unit V V A A A A W W °C THERMAL RESISTANCE RATINGS Symbol Parameter RTHJA Maximum Junction-to-Ambient C/Wa (t <= 5 sec) Maximum Junction-to-Ambient C/Wa (Steady-State) Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Maximum 375 430 Units °C/W Static Symbol VGS Parameter Gate Threshold Voltage Test Conditions VDS = VGS, ID =-250μA Min Typ. Max. Units -0.4 V IGSS Gate-Body Leakage VDS = 0 V , VGS = ±8 V ±100 nA IDSS ID(on) Zero Gate Voltage Drain Current On-State Drain CurrentA VDS = -16 V , VGS = 0 V VDS = -16 V , VGS = 0 V , TJ= 55°C VDS = -5 V, VGs = -4.5 V -5 -1 uA -10 A IDS(on) gfs Drain-Source On-ResistanceA Forward TranconductanceA VGS = -4.5 V, ID = -1.7 A VGS = -2.5 V, ID = -1.5 A VDS = -5V, ID = -1.25 A 79 mΩ 110 9S VSD Diode Forward Voltage IS = -0.46 V, VGS = 0 V -0.65 V Dynamicb Symbol Parameter td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Test Conditions VDD = -10 V , IL = -1 A, VGEN = -4.5 V , RG = 6 Ω Min Typ. Max. Units -- 10 -- ns -- 9 -- ns -- 27 -- ns -- 11 -- ns Publication Order Number: [MS13P21] © Bruckewell Technology Corporation Rev. A -2014 MS13P21 P-Channel 20-V (D-S) MOSFET Dynamicb Symbol Parameter Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions VDS= -10 V , ID = -1.7 A, VGS= -4.5 V Min Typ. Max. Units -- 7.2 -- nC -- 1.7 -- nC -- 1.5 -- nC Publication Order Number: [MS13P21] © Bruckewell Technology Corporation Rev. A -2014 MS13P21 P-Channel 20-V (D-S) MOSFET ■Typical Electrical Characteristics FIG.1-ON REGION CHARACTERISTICS FIG.2-ON-RESISTANCE VARIATION WITH DRAIN CURRENT AND GATE.


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