MS13N50

MS13N50 500V N-Channel MOSFET Description The MS13N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% EAS Test Extended Safe Operating Area RoHS compliant package Application Electronic lamp ballasts based on half bridge topology PFC (Power Factor Correction) SMPS (Switched Mode Power Supplies) Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Drain Current –Pulsed EAS Avalanche Energy EAR Repetitive Avalanche Energy Power Dissipation (TC=25°C) PD Power Dissipation (TC=100°C) Value 500 ±30 13 8 52 803 19.5 195 1.56 Unit V V A A A mJ mJ W W/°C Publication Order Number: [MS13N50] © Bruckewell Technology Corporation Rev. A -2014 MS13N50 500V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter TJ/TSTG Operating Junction and Storage Temperature Note: 1. Pulse width limited by maximum junction temperature 2. Duty cycle...