MS10N65

MS10N65 N-Channel Enhancement Mode Power MOSFET Description The MS10N65 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=700V typically @ Tj=150°C Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Application Power Factor Correction LCD TV Power Full and Half Bridge Power Packing & Order Information Graphic symbol 50/Tube ; 1,000/Box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Pulsed Drain Current EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dV/dt Peak Diode Recovery dV/dt Drain current limited by maximum junction temperature Value 650 ±30 9.5 6.0 38 700 15.6 5.5 Unit V V A A A mJ mJ V/ns Publication Order Number: [MS10N65] © Bruckewell Technology Corporation Rev. A -2014 MS10N65 N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Power Dissipation (TC=25°C) PD Power Dissipation (TC=100°C) TJ/TSTG Operating Junction and Storage Tempe...