IXFN280N085

HiPerFETTM Power MOSFETs Single Die MOSFET IXFN280N085 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt Pd TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C, Chip capability External Lead Current Limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 50/60 Hz, RMS t = 1min IISOL ≤ 1mA t = 1s Mounting torque Terminal connection torque Maximum Ratings 85 85 ±20 ±30 V V V V 280 200 1120 A A A 200 A 4J 5 V/ns 700 W -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g Symbol BVDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless Min. otherwise specified) Typ. Max. VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C VGS = 10V, ID = 100A, Note 1 85 2.0 4.0 ±200 100 2 4.4 V V nA μA mA mΩ VDSS = 85V ID25 = 280A ≤RDS(on) 4.4mΩ miniBLOC, SOT-227 B E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features International standard package miniBLOC, with Aluminium nitride isolation Low RDS(on) HDMOSTM process Rugged polysilicon gate cell structure Avalanche rated Guaranteed FBSOA Low package inductance Fast intrinsic Rectifier Advantages Easy to mount Space sa...