Power MOSFET
Preliminary Technical Information
PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTN32P60P
VDSS ID...
Description
Preliminary Technical Information
PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTN32P60P
VDSS ID25
= =
≤RDS(on)
- 600V - 32A
350mΩ
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR dV/dt PD TJ TJM Tstg TL TSOLD VISOL
Md
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10s
50/60 Hz, RMS
t = 1 minute
IISOL ≤ 1mA
t = 1 second
Mounting torque
Terminal Connection torque
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 ID25, Note 1
Maximum Ratings - 600 - 600
±20 ±30 - 32 - 90
- 32
3.5
V V
V V
A A
A
J
10
890
-55 ... +150 150
-55 ... +150
300 260
2500 3000
1.5/13 1.3/11.5
30
V/ns
W
°C °C °C
°C °C
V~ V~
Nm/lb.in. Nm/lb.in.
g
Characteristic Values Min. Typ. Max.
- 600
V
- 2.5
- 4.5 V
±100 nA
- 50 μA - 250 μA
350 mΩ
miniBLOC, SOT-227 (IXTN) E153432
S G
S D
G = Gate S = Source
D = Drain
Either source terminal at miniBLOC can be used as Main or Kelvin Source.
Features
z International standard package z Rugged PolarPTM process z Avalanche Rated z Low package inductance
Applications
z Hight side switching z Push-pull amplifiers z DC Choppers z Automatic test eq...
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