KTC3875

Plastic-Encapsulate Transistors FEATURES High hFE Low noise Complementary to KTA1504 KTC3875(NPN) Maximum Ratings (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO VCEO VEBO IC PC TJ Tstg 60 50 5 0.15 0.15 150 -55to +150 Unit V V V A W 1. BASE 2. EMITTER 3. COLLECTO SOT-23 ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage VCBO IC=100μA,IE=0 Collector-emitter breakdown voltage VCEO IC= 1mA, IB=0 Emitter-base breakdown voltage VEBO IE= 100μA, IC=0 Collector cut-off current ICBO VCB= 60V, IE=0 Emitter cut-off current IEBO VEB= 5V, IC=0 DC current gain hFE VCE= 6V, IC= 2mA Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA base-emitter saturation voltage VBE(sat) IC=100mA, IB= 10mA Transition frequency Collector output capacitance fT VCE=10V, IC= 1mA Cob VCB=10V,IE=0,f=1MHZ Noise figure NF VCE=6V,IC=0.1mA,Rg=10kΩ,f=1KHZ Min Typ Max Unit 60 V 50 V 5V 0.1 μA 0.1 μA 70 700 0.1 0.25 V 1V 80 MHz 2.0 3.5 pF 1.0 10 dB CLASSIFICATION OF hFE Rank Range Marking O 70-140 ALO Y 120-240 ALY GR 200-400 ALG BL 350-700 ALL GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P1 KTC3875 Typical Characteristics Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTR...