SDB310D

Semiconductor Features Low power rectified Silicon epitaxial type High reliability Ordering Information Type No. Marking SDB310D B1 Outline Dimensions Package Code SOD-323 2.35~2.65 1.60~1.80 0.35 Max. 1.15~1.35 21 CATHODE MARK SDB310D Schottky Barrier Diode unit : mm 21 0.80~1.00 0.20 Min. PIN Connections 1. Anode 2. Cathode 0.10 Max. 0.19 Max. KSD-C002-000 1 SDB310D Absolute maximum ratings Characteristic Symbol Ratings Ta=25°C Unit Reverse voltage VR 30 Repetitive peak forward current IFRM* 0.5 Forward current IF 0.2 Non-repetitive peak forward current(10ms) IFSM 2 Power dissipation PD 150 Junction temperature Tj 150 Storage temperature * : δ = D/T =0.33 (T<1S) Tstg -55 ~ 150 * : Unit ratings. Total rating=Unit rating×1.5 Electrical Characteristics Characteristic Symbol Test Condition Min. Forward voltage 1 VF(1) IF=10mA - Forward voltage 2 VF(2) IF=30mA - Reverse current IR VR=30V - Total capacitance CT VR=1V, f=1MHz - Reverse recovery time trr IF= IR=10mA, IRR= 1mA, RL=100Ω - Typ. - V A A A mW °C °C Ta=25°C Max. Unit 0.4 V 0.5 V 1 µA 10 pF 5 ns KSD-C002-000 2 Electrical Characteristic Curves Fig. 1 IF-VF Fig. 2 IR -VR SDB310D Fig. 3 CT-VR KSD-C002-000 3 ...