KTA1505

PNP General Purpose Transistors P b Lead(Pb)-Free KTA1505 1 2 3 SOT-23 MAXIMUM RATINGS(TA=25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Value -35 -30 -5.0 -500 150 +150 -55 to +150 Unit V V V mA mW °C °C WEITRON http://www.weitron.com.tw 1/3 27-Apr-07 KTA1505 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC = -100µA, IE = 0A Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0A Emitter-Base Breakdown Voltage IE= -100µA, IC =0 Collector Cutoff Current VCB = -35V, IE = 0A Emitter Cutoff Current VEB = -5V, IC = 0A Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min -35 -30 -5.0 - ON CHARACTERISTICS Collector-Emitter Saturation Voltage IC = -100mA, IB = -10mA DC Current Transfer Ration VCE = -1V, IC = -100mA VCE = -6V, IC = -400mA VCE(sat) hFE - 70 25 Typ Max Unit - -V - -V - -V - -0.1 µA - -0.1 µA - -0.25 V - 400 -- SMALL-SIGNAL CHARACTERISTICS Transition frequence VCE=-6V, IC = -20mA Celloctor Output Capacitance VCE=-6V, IE = 0, f=1MHz CLASSIFICATION hFE Rank O Range 70-140 Marking AZO fT Cob - Y 120-240 AZY 200 - MHz 13 - pF GR 200-400 AZG WEITRON http://www.weitron.com.tw 2/3 27-Apr-07 KTA1505 SOT-23 Outline Dimension A TOP VIEW BC D EG H K L J M SOT-23 Dim Min A 0.35 B 1.19 C 2.10 D 0.85 E 0.46 G 1.70 H 2.70 J 0.01 K 0.89 L 0...