SSF11NS65F

                                 Main Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.) ID 11A Features and Benefits: TO220F  Feathers: „ High dv/dt and avalanche capabilities „ 100% avalanche tested „ Low input capacitance and gate charge „ Low gate input resistance SSF11NS65F    Marking and pin Assignment  Schematic diagram        Description: The SSF11NS65F series MOSFETs is a new technology. which combines an innovative super junction technology and advance process. this new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.   Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=22.5mH Avalanche Current @ L=22.5mH Operating Junction and Storage Temperature Range Max. 11 7 44 32.8 0.26 680 ± 30 281 5 -55 to + 150 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2011.07.20 www.silikron.com  Version : 1.1 page 1 of 8                                  SSF11NS65F Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Typ. — — Max. 3.8 62 Units ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IG...